Optical semiconductor device and method for manufacturing the same

ABSTRACT

An optical semiconductor device is provided with a low concentration p-type silicon substrate ( 1 ); a low dopant concentration n-type epitaxial layer (second epitaxial layer) ( 26 ); a low dopant concentration p-type anode layer ( 27 ); a high concentration n-type cathode contact layer ( 9 ); a photodiode ( 2 ) made of the anode layer ( 27 ) and the cathode contact layer ( 9 ); and an NPN transistor ( 3 ) formed on the n-type epitaxial layer ( 26 ). The anode can be substantially completely depleted in the case where the anode layer ( 27 ) has its dopant concentration peak in the vicinity of the interface between the silicon substrate ( 1 ) and the n-type epitaxial layer ( 26 ). Therefore, high speed and high light receiving sensitivity characteristics can be obtained, and further, any influence of auto-doping from peripheral embedding layers can be controlled, so that a depletion layer can be stably formed in the anode. Thus, a photodiode characterized in its high speed and high light receiving sensitivity for short wavelength light and a transistor characterized in its high speed can be mounted on the same semiconductor substrate.

RELATED APPLICATIONS

This application is a Divisional of U.S. patent application Ser. No.12/302,143, filed on Nov. 24, 2008 now U.S. Pat. No. 7,863,701, which isa U.S. National Phase under 35 U.S.C. §371 of International ApplicationNo. PCT/JP2007/057422, filed on Apr. 3, 2007, which in turn claims thebenefit of Japanese Application No. 2006-143986, filed on May 24, 2006,the disclosures of which Applications are incorporated by referenceherein.

FIELD OF THE INVENTION

The present invention relates to an optical semiconductor deviceprovided with a light receiving element and a transistor on the samesubstrate, and a method for manufacturing the semiconductor device.

BACKGROUND OF THE INVENTION

A light receiving element is an element used for converting an opticalsignal into an electrical signal, and used in various fields. In thefield of optical discs such as CD (compact disc) and DVD (digitalversatile disc), in particular, a light receiving element is importantas a key device of an optical head device (optical pickup) which readsand writes a signal recorded on an optical disc. As a higher performanceand a higher integration have been increasingly demanded in recentyears, a so-called opto-electronic integrated circuit (OEIC) providedwith a photo diode which is a light receiving element and otherelectronic elements such as a bipolar transistor, a resistance and acapacitance is being developed. It is demanded that a light receivingelement characterized in its high receiving sensitivity, high speed andlow noise, and a bipolar transistor characterized in its high speed andhigh performance be provided in the OEIC. As a recent trend, thecommercialization of products such as Blu-ray Disc (BD) and HD-DVD, inwhich a blue semiconductor laser (wavelength of 405 nm) is used as alight source, has started in response to a demand for a larger capacityof the optical disc. Accordingly, the development of an OEIC whichachieves a high speed and a high receiving sensitivity in a shortwavelength region corresponding to the blue semiconductor laser isawaited.

Below is described a conventional optical semiconductor device.

FIG. 11 is a schematic sectional view of an optical semiconductor device(OEIC) having a conventional structure. In the example of the drawing isillustrated an OEIC provided with a silicon substrate as a semiconductorsubstrate, a double polysilicon emitter high-speed NPN transistor as abipolar transistor and a pin photodiode as a light receiving element ona same substrate.

Referring to reference numerals shown therein, 1 denotes a lowconcentration p-type silicon substrate, 2 denotes a photodiode formed onthe substrate 1, 3 denotes an NPN transistor formed on the siliconsubstrate, 4 denotes a high concentration p-type embedding layer formedon the silicon substrate 1, 5 denotes a low concentration p-typeepitaxial layer formed on the p-type embedding layer 4, 6 denotes ann-type epitaxial layer formed on the p-type epitaxial layer 5, and 7denotes a LOCOS isolation layer formed on the n-type epitaxial layer 6.

In the photodiode 2, 8 denotes a cathode layer made of the n-typeepitaxial layer 6, 9 denotes a cathode contact layer formed on thecathode layer 8, 10 denotes a cathode electrode selectively formed onthe cathode contact layer 9, 11 denotes a p-type anode embedding layerformed in the interface between the p-type epitaxial layer 5 and then-type epitaxial layer 6, 12 denotes a p-type anode contact layer formedon the anode embedding layer 11, and 13 denotes an anode electrodeformed on the anode contact layer 12.

In the NPN transistor 3, 14 denotes a high concentration n-typecollector embedding layer formed in the interface between the p-typeepitaxial layer 5 and the n-type epitaxial layer 6, 15 denotes a highconcentration n-type collector contact layer selectively formed on thecollector embedding layer 14, 16 denotes a collector electrode formed onthe collector contact layer 15, 17 denotes a p-type base layerselectively formed in the n-type epitaxial layer 6 on the collectorembedding layer 14, 18 denotes a base electrode connected to the baselayer 17, 19 denotes a high concentration n-type emitter layerselectively formed on the base layer 17, and 20 denotes an emitterelectrode formed on the emitter layer 19.

21 denotes a first insulation film formed on the n-type epitaxial layer6, 22 denotes a second insulation film formed on the first insulationfilm 21, and 23 denotes a light receiving surface created in such a waythat the second insulation film 22 of the photo diode 2 is selectivelyremoved in order for the first insulation film 21 to be exposed. Athickness and a refractive index of the first insulation film 21 areoptimized, so that a reflection preventing film for reducing thereflection of an incident light in the interface is provided.

An operation of the OEIC thus constituted is described below.

The light enters through the light receiving surface 23 and is absorbedby the cathode layer 8 and the p-type epitaxial layer 5 which is ananode. As a result, electron-hole pairs are generated. When a reversebias is applied to the photo diode 2 at the time, a depletion layerextends on the side of the p-type epitaxial layer 5 of which the dopantconcentration is low. Of the electron-hole pairs generated in thevicinity of the depletion layer, the electrons and the holes arediffused and drifted and thereby separated from each other, and arriveat the cathode contact layer 9 and the anode embedding layer 11,respectively. Then, carriers are retrieved as optical current from thecathode electrode 10 and the anode electrode 13. The optical current isamplified and signal-processed by an electronic circuit comprising theNPN transistor 3 and the resistance element and capacitance elementprovided on the silicon substrate 1, and then outputted as recording andreproduction signals for the optical disc.

In the structure according to the conventional technology, however, theoptical current in the photodiode 2 is roughly divided into diffusioncurrent components and drift current components. The diffusion currentis dominated by the diffusion of minority carriers up to the end of thedepletion layer. Therefore, a response speed of the diffusion currentcomponent is lower than that of the drift current component resultingfrom an electrical field in the depletion layer. Further, there are somecarriers which are recombined before reaching the depletion layer. Thus,the diffusion current may cause the deterioration of a frequencycharacteristic and light receiving sensitivity of the photodiode 2. Thepercentage of the carriers absorbed in a surface vicinity is increasedas the optical wavelength is shorter. In the case of silicon, forexample, the depth of approximately 11 μm is necessary in order toobtain the carrier absorption ratio of 95% in the red light having thewavelength of 650 nm which is used as the light source for DVD, whilethe absorption ratio at the same level can be obtained in the depth ofapproximately 0.8 μm in the case of the blue light having the wavelengthof 405 nm. Thus, a light having a short wavelength is seriously affectedin the vicinity of the silicon surface.

Below is described another optical semiconductor device proposed inorder to solve the problem. FIG. 12 is a schematic sectional view of theOEIC thus proposed.

In FIG. 12, 24 denotes a low concentration first p-type epitaxial layerformed on the high concentration p-type embedding layer 4, 25 denotes alow concentration second p-type epitaxial layer formed on the firstp-type epitaxial layer 24. This constitution is different to that ofFIG. 11 in that the reference numerals 24 and 25 both denote the p-typeepitaxial layers. The rest of the constitution is the same as that ofthe conventional example illustrated in FIG. 11.

In this constitution, a cathode made of the cathode contact layer 9 andan anode made of the first p-type epitaxial layer 24 and the secondp-type epitaxial layer 25 constitute the light receiving element. Incomparison to the constitution illustrated in FIG. 11, the cathode layeris very thin.

When the light enters through the light receiving surface 23, it isabsorbed by the cathode contact layer 9, first p-type epitaxial layer 24and second p-type epitaxial layer 25. As a result, electron-hole pairsare generated. The electrons and the holes are diffused and drifted andthereby separated from each other, and arrive at the cathode contactlayer 9 and the anode embedding layer 11, respectively. As a result,optical current is generated. In the case where the depth of the cathodecontact layer 9 is at most 0.3 μm, and the concentrations of the firstp-type epitaxial layer 24 and the second p-type epitaxial layer 25 areapproximately 1×10¹⁴ cm⁻¹, for example, an anode depletion layer isextended by approximately 10 μm, and most of the incident light having awavelength shorter than 650 nm which is particularly used for DVD isabsorbed in the depletion layer. In other words, the diffusion currentcomponents are reduced and the drift current components are dominant inthe optical current. Therefore, a high-speed response of the photodiode2 can be realized.

-   PATENT DOCUMENT 1: 2005-183722 of the Japanese Patent Applications    Laid-Open (Page 5-6, FIG. 1)-   PATENT DOCUMENT 2: 2001-284629 of the Japanese Patent Applications    Laid-Open (Pages 7-8, FIGS. 1-2)

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

In the anode in the constitution illustrated in FIG. 12, however, a lowdopant concentration interface is present between the first p-typeepitaxial layer 24 and the second p-type epitaxial layer 25. Therefore,during the growth of the second p-type epitaxial layer 25, auto dopingfrom the anode embedding layer 11 and the collector embedding layer 14in the periphery of the photodiode 2 may cause the dopant concentrationin the interface to vary. As a result, the inversion to the n-type mayoccur in the worst case. If the inversion occurs, pn junction isgenerated in the anode, and the carriers generated by the absorption oflight are recombined, thereby failing to contribute to the opticalcurrent. As a result, the frequency characteristic and light receivingsensitivity of the photodiode 2 may be deteriorated.

The present invention was made in order to solve the conventionalproblems, and a main object of the present invention is to provide anoptical semiconductor device provided with a light receiving elementcharacterized in its high speed and high light receiving sensitivity forblue light and a transistor characterized in its high speed on the samesubstrate.

Means for Solving the Problems

1) A first optical semiconductor device according to the presentinvention is an optical semiconductor device provided with a lightreceiving element and a transistor on the same substrate, comprising:

a second epitaxial layer of a second conductivity type having a lowdopant concentration formed on a semiconductor substrate of firstconductivity type;

a first diffusion layer of the first conductivity type having a lowdopant concentration selectively formed on the second epitaxial layer;and

a second diffusion layer of the second conductivity type having a highdopant concentration formed at an upper section of the first diffusionlayer, wherein

the first and second diffusion layers constitute the light receivingelement, and the transistor is formed in the second epitaxial layer, and

the first diffusion layer has its dopant concentration peak in theinterface between the semiconductor substrate and the second epitaxiallayer.

The “second” recited in the second epitaxial layer corresponds to asecond epitaxial layer in the constitution 2) comprising a firstepitaxial layer and a second epitaxial layer described later.

A method for manufacturing an optical semiconductor device according tothe present invention corresponding to the first semiconductor device isa method for manufacturing an optical semiconductor device provided witha light receiving element and a transistor on the same substrate,comprising:

a) a step for forming a second epitaxial layer of a second conductivitytype having a low dopant concentration on a semiconductor substrate of afirst conductivity type;

b) a step for selectively forming a first diffusion layer of the firstconductivity type having a low dopant concentration in the secondepitaxial layer by means of ion implantation so that the first diffusionlayer has its dopant concentration peak in the interface between thesemiconductor substrate and the second epitaxial layer;

c) a step for forming a second diffusion layer of the secondconductivity type having a high dopant concentration at an upper sectionof the first diffusion layer; and

d) a step for selectively forming the transistor in the second epitaxiallayer, wherein

the first and second diffusion layers constitute the light receivingelement.

The first conductivity type and the second conductivity type denoteeither the p type or the n type of a semiconductor. In the case wherethe first conductivity type is the p type, the second conductivity typeis the n type. In the case where the first conductivity type is the ntype, the second conductivity type is the p type (the same applyinghereinafter).

According to the constitution, the combination of the first diffusionlayer of first conductivity type having a low dopant concentration andthe second diffusion layer of the second conductivity type having a highdopant concentration formed at the upper section of the first diffusionlayer constitutes the diffusion layer in the light receiving element.Therefore, a substantially complete depletion of the light receivingelement portion can be realized when the depth of the second diffusionlayer is reduced, and the percentage of the recombination of thecarriers is lessened because the optical current is dominated by thedrift current. As a result, a high speed and a high light receivingsensitivity can be realized.

Further, the first diffusion layer has its dopant concentration peak inthe vicinity of the interface between the semiconductor substrate andthe second epitaxial layer, and the dopant concentration is set suchthat the depletion layer is adequately extended toward the firstdiffusion layer. Because the dopant concentration peak falls on theinterface, the influence of the auto doping from the anode/collectorembedding layers in the periphery of the light receiving elementgenerated when the second epitaxial layer is grown can be reduced, and adesired concentration profile can be reliably realized.

A method for manufacturing another optical semiconductor deviceaccording to the present invention corresponding to the firstsemiconductor device is a method for manufacturing an opticalsemiconductor device provided with a light receiving element and atransistor on the same substrate, comprising:

a) a step for selectively forming a second embedding layer of a firstconductivity type having a low dopant concentration and having itsdopant concentration peak on a surface of a semiconductor substrate ofthe first conductivity type at an upper section of the semiconductorsubstrate;

b) a step for forming a second epitaxial layer of a second conductivitytype having a low dopant concentration on the semiconductor substrate;

c) a step for forming a second diffusion layer of the secondconductivity type having a high dopant concentration which is bonded tothe second embedding layer at an upper section of the second epitaxiallayer; and

d) a step for selectively forming the transistor in the second epitaxiallayer, wherein

the second embedding layer and the second diffusion layer constitute thelight receiving element.

2) A second optical semiconductor device according to the presentinvention is an optical semiconductor device provided with a lightreceiving element and a transistor on the same substrate, comprising:

an embedding layer of a first conductivity type having a high dopantconcentration formed at an upper section of a semiconductor substrate ofthe first conductivity type;

a first epitaxial layer of the first conductivity type having a lowdopant concentration formed on the embedding layer;

a second epitaxial layer of a second conductivity type having a lowdopant concentration formed on the first epitaxial layer;

a first diffusion layer of the first conductivity type having a lowdopant concentration selectively formed on the second epitaxial layer;and

a second diffusion layer of the second conductivity type having a highdopant concentration formed at an upper section of the first diffusionlayer, wherein

the first and second diffusion layers constitute the light receivingelement, and the transistor is formed in the second epitaxial layer, and

the first diffusion layer has its dopant concentration peak in theinterface between the first and second epitaxial layers.

According to the constitution, a potential barrier is formed between thesemiconductor substrate and the embedding layer of the firstconductivity type having a high dopant concentration. The light absorbedin the semiconductor substrate fails to pass the potential barrier, andthe carriers are thereby recombined, which reduces the diffusion currentcomponents. When a low concentration and an appropriate film thicknessare selected for the first epitaxial layer of the first conductivitytype having a low dopant concentration and the first diffusion layer ofthe first conductivity type having a low dopant concentration, acomplete depletion can be realized, and a higher speed can be achieved.Further, because the embedding layer of the first conductivity typehaving a high dopant concentration is provided, a series resistancecreated in the case where the carriers move toward the anode is reduced,which further improves the speed.

3) In the constitutions in 1) and 2), preferably, a well layer of thesecond conductivity type selectively formed in the second epitaxiallayer is further provided, and the transistor is formed in the welllayer. In the case where the concentration of the well layer of thesecond conductivity type is set to be higher than that of the secondepitaxial layer of the second conductivity type having a low dopantconcentration in the foregoing constitution, a collector resistance ofthe transistor is reduced. As a result, the speed can be furtherimproved.

4) Further, preferably, a well layer of the first conductivity typeselectively formed in the second epitaxial layer is further provided,and the transistor is formed in the well layer. This constitution iseffective for a vertical transistor. In the case where the well layer ofthe first conductivity type is thus formed apart from the firstdiffusion layer of the first conductivity type having a low dopantconcentration, the concentration of the well layer of the firstconductivity type can be increased. As a result, the collectorresistance can be reduced, and a higher speed can be realized in thevertical transistor.

5) Further, a third diffusion layer of the first conductivity typehaving its dopant concentration peak on a surface of the secondepitaxial layer is preferably further provided at an upper section ofthe first diffusion layer. Thus constituted, the auto doping generatedwhen the second epitaxial layer is grown can be reduced. In addition, aconcentration gradient is formed in an anode effective concentrationprofile, and a potential slope is formed, and the speed at which thecarriers move in the direction of the epitaxial layer is increased. As aresult, the light receiving element can achieve a higher speed.

Effect of the Invention

According to the optical semiconductor device and the method ofmanufacturing the optical semiconductor device provided by the presentinvention, when the depth of the second diffusion layer of the secondconductivity type is reduced, a substantially complete depletion of thephotodiode portion can be realised. Further, the percentage of thecarriers which are recombined decreases since the optical current isdominated by the drift current. As a result, a higher speed and a higherlight receiving sensitivity can be realized.

Further, the dopant concentration peak of the first diffusion layer isprovided in the interface between the semiconductor substrate and theepitaxial layer of the first conductivity type. Accordingly, anyinfluence of the auto doping generated from peripheral embedding layerscan be controlled, and the interfacial concentration can be stabilized.As a result, the depletion layer can be reliably formed in the anode,and the photodiode can achieve a higher speed and a goodreproducibility.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view illustrating a constitution of an opticalsemiconductor device according to a preferred embodiment 1 of thepresent invention.

FIG. 2 is an illustration of a photodiode concentration profile in theoptical semiconductor device according to the preferred embodiment 1.

FIG. 3 is a sectional view illustrating a constitution of an opticalsemiconductor device according to a preferred embodiment 2 of thepresent invention.

FIG. 4 is an illustration of a photodiode concentration profile in theoptical semiconductor device according to the preferred embodiment 2.

FIG. 5 is a sectional view illustrating a constitution of an opticalsemiconductor device according to a preferred embodiment 3 of thepresent invention.

FIG. 6 is an illustration of a photodiode concentration profile in theoptical semiconductor device according to the preferred embodiment 3.

FIG. 7A is a process sectional view illustrating a method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 1.

FIG. 7B is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 1.

FIG. 7C is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 1.

FIG. 7D is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 1.

FIG. 7E is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 1.

FIG. 8A is a process sectional view illustrating a method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 2.

FIG. 8B is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 2.

FIG. 8C is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 2.

FIG. 8D is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 2.

FIG. 8E is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 2.

FIG. 9A is a process sectional view illustrating a method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 3.

FIG. 9B is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 3.

FIG. 9C is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 3.

FIG. 9D is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 3.

FIG. 10A is a process sectional view illustrating a method ofmanufacturing an optical semiconductor device according to a preferredembodiment 4 of the present invention.

FIG. 10B is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 4.

FIG. 10C is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 4.

FIG. 10D is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 4.

FIG. 10E is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 4.

FIG. 10F is a process sectional view illustrating the method ofmanufacturing the optical semiconductor device according to thepreferred embodiment 4.

FIG. 11 is a sectional view illustrating a constitution of aconventional optical semiconductor device.

FIG. 12 is a sectional view illustrating a constitution of anotherconventional optical semiconductor device.

DESCRIPTION OF REFERENCE SYMBOLS

-   -   1 silicon substrate    -   2 photodiode    -   3 NPN transistor    -   4 p-type embedding layer    -   5 p-type epitaxial layer (first epitaxial layer)    -   6 n-type epitaxial layer    -   7 LOCOS isolation layer    -   8 cathode layer    -   9 cathode contact layer (second diffusion layer)    -   10 cathode electrode    -   11 anode embedding layer    -   12 anode contact layer    -   13 anode electrode    -   14 collector embedding layer    -   15 collector contact layer    -   16 collector electrode    -   17 base layer    -   18 base electrode    -   19 emitter layer    -   20 emitter electrode    -   21 first insulation film    -   22 second insulation film    -   23 light receiving surface    -   24 first p-type epitaxial layer    -   25 second p-type epitaxial layer    -   26 n-type epitaxial layer (second epitaxial layer)    -   27 anode layer (first diffusion layer)    -   28 n-type well layer    -   29 anode layer (first diffusion layer)    -   30 low concentration anode embedding layer    -   31 low concentration anode diffusion layer (third diffusion        layer)    -   32 anode effective concentration profile    -   40 photodiode    -   41 NPN transistor    -   42 silicon substrate    -   43 p-type embedding layer    -   44 n-type embedding layer    -   45 n-type epitaxial layer (second epitaxial layer)    -   46 anode diffusion layer (first diffusion layer)    -   47 n-type well layer    -   48 LOCOS isolation layer    -   49 cathode layer (second diffusion layer)    -   50 anode embedding layer (second embedding layer)    -   51 anode diffusion layer (third diffusion layer)    -   52 p-type embedding layer (first embedding layer)    -   53 p-type epitaxial layer (first epitaxial layer)

PREFERRED EMBODIMENTS OF THE PRESENT INVENTION Preferred Embodiment 1 ofOptical Semiconductor Device

A preferred embodiment 1 of an optical semiconductor device according tothe present invention is described referring to the drawings.

FIG. 1 is a sectional view illustrating a constitution of an opticalsemiconductor device according to the preferred embodiment 1. In FIG. 1,1 denotes a low concentration p-type silicon substrate, 2 denotes aphotodiode, 3 denotes an NPN transistor, 7 denotes a LOCOS isolationlayer, 9 denotes a cathode contact layer (second diffusion layer), 10denotes a cathode electrode, 11 denotes an anode embedding layer, 12denotes an anode contact layer, 13 denotes an anode electrode, 14denotes a high concentration n-type collector embedding layer, 15denotes a collector contact layer, 16 denotes a collector electrode, 17denotes a base layer, 18 denotes a base electrode, 19 denotes an emitterlayer, 20 denotes an emitter electrode, 21 denotes a first insulationfilm, 22 denotes a second insulation film, and 23 denotes a lightreceiving surface. These components are the same as those provided inthe conventional structure.

Further, 26 denotes a low concentration n-type epitaxial layer (secondepitaxial layer) formed on the silicon substrate 1, 27 denotes a lowconcentration p-type anode layer (first diffusion layer) formed by meansof diffusion in the region of the photodiode 2 in the n-type epitaxiallayer 26, and 28 denotes an n-type well layer formed by means ofdiffusion in the region of the NPN transistor 3 in the n-type epitaxiallayer 26 and having a concentration higher than that of the n-typeepitaxial layer 26.

An operation of the optical semiconductor device according to thepresent preferred embodiment thus constituted is described below.

A basic operation is the same as described referring to FIGS. 11 and 12.An incident light entering through the light receiving surface 23 isabsorbed by the cathode contact layer 9, anode layer 27 and siliconsubstrate 1, and electron-hole pairs are thereby generated. Theelectrons and the holes are diffused and drifted and thereby separatedfrom each other, and respectively arrive at the cathode contact layer 9and the anode embedding layer 11. Accordingly, optical current isgenerated. In the case where the depth of the cathode contact layer 9 isat most 0.3 μm, and the concentrations of the p-type silicon substrate 1and the anode layer 27 are approximately 1×10¹⁴ cm⁻³, for example, ananode depletion layer is extended by approximately 10 μm, and most ofthe incident light having a wavelength shorter than 650 nm which isparticularly used for DVD is absorbed in the depletion layer. In otherwords, diffusion current components are reduced and drift currentcomponents are dominant in the optical current. Therefore, a high-speedresponse of the photodiode 2 can be realized. Further, the percentage ofcarriers which are recombined is reduced, which improves a lightreceiving sensitivity.

FIG. 2 illustrates a concentration profile in the depth direction of thephotodiode 2. Reference numerals shown in the drawings are the same asthose shown in FIG. 1. The anode layer (first diffusion layer) 27 has adopant concentration peak in the vicinity of the interface between thesilicon substrate 1 and the n-type epitaxial layer (second epitaxiallayer) 26. A dotted line in the vertical direction denotes theinterface. The dopant concentration is set so that the depletion layeradequately extends toward the anode layer 27. In this constitutionwherein the dopant concentration peak falls on the interface, anyinfluence of the auto doping from the anode embedding layer 11 and thecollector embedding layer 14 in the periphery of the photodiode 2generated when the n-type epitaxial layer 26 is grown can be reduced,and a desired concentration profile can be reliably realized.

In the present preferred embodiment, the collector embedding layer 14and the n-type well layer 28 constitute a collector of the NPNtransistor 3. When the concentration of the n-type well layer 28 is setto be higher than that of the n-type epitaxial layer 26, a collectorresistance is lessened, and a high-speed characteristic can be realized.

More specifically, the photodiode 2 characterized in its high speed andhigh sensitivity and the high-speed transistor 3 can be formed on thesame substrate in a stable manner, which realizes such a structure thatcan maximize the characteristic improvement of the respective elements.As a result, characteristics of the OEIC can be improved.

The present preferred embodiment is particularly effective for a lighthaving a short wavelength of which an absorption coefficient is large.95% of the carriers are absorbed in the depth of 0.8 μm in the bluelight for BD (wavelength of 405 nm). Therefore, almost 100% of thecarriers are absorbed provided that the thickness of the n-typeepitaxial layer 26 is 1 μm. Further, in the NPN transistor 3, it isbetter for the n-type epitaxial layer 26 to be thinner in order toimprove the speed by reducing a parasitic capacitance and a parasiticresistance. For example, the speed can be improved in the NPN transistor3 in the case where the thickness of n-type epitaxial layer 26 is 1 μm.

Preferred Embodiment 2 of Optical Semiconductor Device

A preferred embodiment 2 of the optical semiconductor device accordingto the present invention is described referring to the drawings.

FIG. 3 is a sectional view illustrating a constitution of an opticalsemiconductor device according to the preferred embodiment 2. In FIG. 3,4 denotes a high concentration p-type embedding layer formed on asilicon substrate 1, 5 denotes a low concentration p-type epitaxiallayer (first epitaxial layer) formed on the p-type embedding layer 4,and 29 denotes a low concentration p-type anode layer (first diffusionlayer). The rest of the constitution is the same as that of thepreferred embodiment 1.

The optical semiconductor device according to the present preferredembodiment is characterized in that a silicon substrate 1, a p-typeembedding layer 4 and a p-type epitaxial layer (first epitaxial layer) 5are used in place of the silicon substrate 1 according to the preferredembodiment 1.

FIG. 4 shows a concentration profile in the depth direction of thephotodiode 2. Numerals shown in the drawing are the same as those shownin FIG. 3. The anode layer (first diffusion layer) 29 has a dopantconcentration peak in the vicinity of the interface between the p-typeepitaxial layer (first epitaxialy layer) 5 and the n-type epitaxiallayer (second epitaxial layer) 26. Therefore, the influence of the autodoping generated when the n-type epitaxial layer 26 is grown can bereduced, and a desired concentration profile can be reliably realized.

The constitution according to the present preferred embodiment isadvantageous in that, in addition to the effect according to thepreferred embodiment 1, a potential barrier is formed between thesilicon substrate 1 and the p-type embedding layer 4, and the lightabsorbed in the silicon substrate 1 fails to pass the potential barrierand the carriers are thereby recombined, which results in the reductionof the diffusion current components. A complete depletion can berealized when a low concentration and an appropriate film thickness areselected for the p-type epitaxial layer 5 and the anode 29, and a higherspeed can be thereby realized. Further, a series resistance in the casewhere the carriers move toward the anode embedding layer 11 is lesseneddue to the presence of the p-type embedding layer 4, which leads to therealization of a higher speed.

Preferred Embodiment 3 of Optical Semiconductor Device

A preferred embodiment 3 of an optical semiconductor device according tothe present invention is described referring to the drawings.

FIG. 5 is a sectional view illustrating a constitution of an opticalsemiconductor device according to the preferred embodiment 3. In FIG. 5,30 denotes a low concentration p-type anode embedding layer, and 31denotes a low concentration p-type anode diffusion layer (thirddiffusion layer). The rest of the constitution is the same as that ofthe preferred embodiment 1.

FIG. 6 illustrates a concentration profile in the depth direction of thephotodiode 2, wherein 32 denotes an anode effective concentrationprofile. The rest of the reference numerals shown therein are the sameas those shown in FIG. 5.

The low concentration anode embedding layer 30 has a dopantconcentration peak in the vicinity of the interface between the p-typeepitaxial layer (first epitaxial layer) 5 and the n-type epitaxial layer(second epitaxial layer) 26.

Further, the low concentration anode diffusion layer (third diffusionlayer) 31 has a dopant concentration peak in the vicinity of the surfaceof the n-type epitaxial layer (second epitaxial layer) 26.

Thus constituted, a concentration gradient is formed in the anodeeffective concentration profile 32 in addition to the reduction of theauto doping during the growth of the n-type epitaxial layer 26.Accordingly, a potential slope is formed, and the speed at which thecarriers move in the depth direction of the p-type epitaxial layer 5 isincreased. As a result, the photodiode 2 can achieve a higher speed.

Preferred Embodiment 1 of Method for Manufacturing Optical SemiconductorDevice

FIGS. 7A-7E are sectional views illustrating processing steps of apreferred embodiment 1 of a method for manufacturing the opticalsemiconductor device according to the present invention. 40 denotes aphotodiode, 41 denotes an NPN transistor, 42 denotes a low concentrationp-type silicon substrate, 43 denotes a p-type embedding layer, 44denotes an n-type embedding layer of a collector of the NPN transistor41, 45 denotes a low concentration n-type epitaxial layer (secondepitaxial layer), 46 denotes a low concentration p-type anode diffusionlayer (first diffusion layer), 47 denotes an n-type well layer having aconcentration higher than that of the n-type epitaxial layer 45, 48denotes a LOCOS isolation layer, and 49 denotes a high concentrationn-type cathode layer (second diffusion layer).

First, the p-type embedding layer 43 and the n-type embedding layer 44are selectively formed in the silicon substrate 42 by means of the ionimplantation or the like (see FIG. 7A).

Next, the n-type epitaxial layer (second epitaxial layer) 45 (forexample, film thickness: approximately 1 μm, concentration:approximately 5×10¹⁴ cm⁻³) is grown on the silicon substrate 42 (seeFIG. 7B).

Next, the p-type anode diffusion layer (first diffusion layer) 46 isselectively formed in the region of the photodiode 40 in the n-typeepitaxial layer (second epitaxial layer) 45 by means of the ionimplantation under high-energy conditions (for example, accelerationenergy: 200 keV, dosing amount: 1×10¹¹ cm⁻²) so that the dopantconcentration peak is in the vicinity of the interface between thesilicon substrate 42 and the n-type epitaxial layer (second epitaxiallayer) 45. After that, the n-type well layer 47 is selectively formed inthe region of the NPN transistor 41 by means of the ion implantation orthe like, and then, the LOCOS isolation layer 48 is formed (see FIG.7C).

Further, the cathode layer (second diffusion layer) 49 and abase/emitter diffusion layer of the NPN transistor 41 are formed on theanode diffusion layer (first diffusion layer) 46, and on the n-typelayer 47, respectively (see FIG. 7D). Finally, field films andelectrodes are formed so that the photodiode 40 and the NPN transistor41 are formed (see FIG. 7E).

Below is given the summary of the processing steps described so far.

A method for manufacturing an optical semiconductor device provided withthe light receiving element 40 and the transistor 41 on the samesubstrate 42, comprising:

a) a step for forming the second epitaxial layer 45 of a secondconductivity type (n-type) having a low dopant concentration on thesemiconductor substrate 42 of a first conductivity type (p-type);

b) a step for selectively forming the first diffusion layer 46 of thefirst conductivity type (p-type) having a low dopant concentration inthe second epitaxial layer 45 by means of the ion implantation so thatthe first diffusion layer has its dopant concentration peak in theinterface between the semiconductor substrate 42 and the secondepitaxial layer 45;

c) a step for forming the second diffusion layer 49 of the secondconductivity type (n-type) having a high dopant concentration at anupper section of the first diffusion layer 46; and

d) a step for selectively forming the transistor 41 in the secondepitaxial layer 45, wherein

the first diffusion layer 46 and the second diffusion layer 49constitute the light receiving element 40.

Preferred Embodiment 2 of Method for Manufacturing Optical SemiconductorDevice

FIGS. 8A-8E are sectional views illustrating processing steps of apreferred embodiment 2 of the method for manufacturing the opticalsemiconductor device according to the present invention. In thedrawings, 50 denotes a low concentration p-type anode embedding layer(second embedding layer). The rest of the constitution is the same asillustrated in FIG. 7.

First, the p-type embedding layer 43, n-type embedding layer 44 andanode embedding layer (second embedding layer) 50 are selectively formedin the silicon substrate 42 by means of the ion implantation or the like(see FIG. 8A). In the formation, conditions are set so that the anodeembedding layer (second embedding layer) 50 has its dopant concentrationpeak in the vicinity of the surface of the silicon substrate 42 (forexample, acceleration energy: 30 keV, dosing amount: 1×10¹¹ cm⁻²).

Next, the n-type epitaxial layer (second epitaxial layer) 45 (forexample, film thickness: 1 μm, concentration: 5×10¹⁴ cm⁻³) is grown onthe silicon substrate 42 (see FIG. 8B).

Then, in the n-type epitaxial layer 45, the n-type well layer 47 isselectively formed in the region of the NPN transistor 41 by means ofthe ion implantation or the like, and, the LOCOS isolation layer 48 isthereafter formed (see FIG. 8C). At the time, a heat treatment isprovided so that the anode embedding layer (second embedding layer) 50diffuses onto the surface of the n-type epitaxial layer (secondepitaxial layer) 45.

Further, the cathode layer (second diffusion layer) 49 and thebase/emitter diffusion layer of the NPN transistor 41 are formed on theanode embedding layer (second embedding layer) 50, and on the n-typelayer 47, respectively (see FIG. 8D). Finally, filed films andelectrodes are formed so that the photodiode 40 and the NPN transistor41 are formed (see FIG. 8E).

The processing steps described so far can be summarized as below.

A method for manufacturing an optical semiconductor device provided withthe light receiving element 40 and the transistor 41 on the samesubstrate 42, comprising:

a) a step for selectively forming the second embedding layer 50 of afirst conductivity type (p-type) having a low dopant concentration andhaving its dopant concentration peak on the surface of the semiconductorsubstrate 42 at an upper section of the semiconductor substrate 42 ofthe first conductivity type (p-type);

b) a step for forming the second epitaxial layer 45 of a secondconductivity type (n-type) having a low dopant concentration on thesemiconductor substrate 42;

c) a step for forming the second diffusion layer 49 of the secondconductivity type (n-type) having a high dopant concentration bonded tothe second embedding layer 50 at an upper section of the secondepitaxial layer 45; and

d) a step for selectively forming the transistor 41 in the secondepitaxial layer 45, wherein

the second embedding layer 50 and the second diffusion layer 49constitute the light receiving element 40.

Preferred Embodiment 3 of Method for Manufacturing Optical SemiconductorDevice

FIGS. 9A-9E are sectional views illustrating processing steps of apreferred embodiment 3 of the method for manufacturing the opticalsemiconductor device according to the present invention. In thedrawings, 51 denotes a low concentration p-type anode diffusion layer(third diffusion layer). The rest of the constitution is the same asillustrated in FIG. 8.

First, the p-type embedding layer 43, n-type embedding layer 44 andanode embedding layer (second embedding layer) 50 are selectively formedin the silicon substrate 42 by means of the ion implantation or the like(FIG. 9A). In the formation, conditions are set so that the anodeembedding layer (second embedding layer) 50 has its dopant concentrationpeak in the vicinity of the surface of the silicon substrate 42 (forexample, acceleration energy: 30 keV, dosing amount: 1×10¹¹ cm⁻²).

Next, the n-type epitaxial layer (second epitaxial layer) 45 (forexample, film thickness: 1 μm, concentration: 5×10¹⁴ cm⁻³) is grown onthe silicon substrate 42 (see FIG. 9B).

Next, the anode diffusion layer (third diffusion layer) 51 isselectively formed in the region of the photodiode 40 in the n-typeepitaxial layer (second epitaxial layer) 45 so that the anode diffusionlayer 51 has its dopant concentration thereof in the vicinity of thesurface of the n-type epitaxial layer (second epitaxial layer) 45 and isconnected to the anode embedding layer (second embedding layer) 50 bymeans of the ion implantation or the like (for example, accelerationenergy: 30 keV, dosing amount: 1×10¹¹ cm⁻²). Further, the n-type welllayer 47 is selectively formed in the region of the NPN transistor 41 bymeans of the ion implantation or the like. After that, the LOCOSisolation layer 48 is formed (see FIG. 9C).

Further, the cathode layer (second diffusion layer) 49 and thebase/emitter diffusion layer of the NPN transistor 41 are formed on theanode diffusion layer (third diffusion layer) 51, and on the n-typelayer 47, respectively (see FIG. 9D). Finally, filed films andelectrodes are formed so that the photodiode 40 and the NPN transistor41 are formed (see FIG. 9E).

The processing steps described so far can be summarized as below.

The method for manufacturing the optical semiconductor device accordingto the preferred embodiment 1 or 2 further comprises e) a step forselectively forming the third diffusion layer 51 of the first conductivetype (p-type) having its dopant concentration peak on the surface of thesecond epitaxial layer 45 at an upper section of the first diffusionlayer 45 or the second embedding layer 50 between the steps b) and c).

Preferred Embodiment 4 of Method for Manufacturing Optical SemiconductorDevice

FIGS. 10A-10E are sectional views illustrating processing steps of apreferred embodiment 4 of the method for manufacturing the opticalsemiconductor device according to the present invention. In thedrawings, 52 denotes a high concentration p-type embedding layer (firstembedding layer), and 53 denotes a low concentration p-type epitaxiallayer (first epitaxial layer). The rest of the constitution is the sameas illustrated in FIG. 7.

First, the p-type embedding layer (first embedding layer) 52 is formedin the silicon substrate 42 by means of the ion implantation or thelike, and the p-type epitaxial layer (first epitaxial layer) 53 isthereafter grown (see FIGS. 10A and 10B).

Next, the p-type embedding layer 43 and the n-type embedding layer 44are selectively formed in the p-type epitaxial layer 53 by means of theion implantation or the like (see FIG. 10B).

Then, the n-type epitaxial layer (second epitaxial layer) 45 (forexample, film thickness: 1 μm, concentration: 5×10¹⁴ cm⁻³) is grown onthe p-type epitaxial layer (first epitaxial layer) 53 (see FIG. 10C).When the n-type epitaxial layer 45 is grown, a thin film (for example,approximately 0.2 μm) is formed, and the supply of silane-based materialgas is then halted so that the formed thin film is retained as it is, orthe formed thin film is once taken out of an epitaxial oven. Then, theremaining film thickness portion of the epitaxial layer 45 (for example,approximately 0.8 μm) is grown again (so-called capping epitaxialgrowth). In this case, the auto doping from the embedding layer can bereduced more.

Then, in the n-type epitaxial layer (second epitaxial layer) 45, thep-type anode diffusion layer (first diffusion layer) 46 and the n-typewell layer 47 are selectively formed in the region of the photodiode 40and in the region of the NPN transistor 41, respectively. After that,the LOCOS isolation layer 48 is formed (see FIG. 10D).

Further, the cathode layer (second diffusion layer) 49 and thebase/emitter diffusion layer of the NPN transistor 41 are formed on theanode diffusion layer (first diffusion layer) 46, and on the n-typelayer 47, respectively (see FIG. 10E). Finally, field films andelectrodes are formed so that the photodiode 40 and the NPN transistor41 are formed (see FIG. 10F).

Below is given the summary of the processing steps described so far.

The method for manufacturing the optical semiconductor device accordingto the preferred embodiment 1, 2 or 3 further comprises f1) a step forforming the first embedding layer 52 of the first conductive type(p-type) having a high dopant concentration at an upper section of thesemiconductor substrate 42 and f2) a step for forming the firstepitaxial layer 53 of the first conductivity type (p-type) having a lowdopant concentration on the first embedding layer 52 before the step a).

In the present preferred embodiments, the silicon substrate is adopted.However, the substrate to be used is not necessarily limited thereto,and a germanium substrate or a compound substrate, which is used in along wavelength region, for example, may be used.

In the present invention, the pin photodiode is used as the lightreceiving element; however, it is needless to say that an avalanchephotodiode or a phototransistor can be selected. Further, it is needlessto say that the NPN transistor adopted as the transistor in thisspecification can be replaced with a PNP transistor or an MOStransistor.

In the present invention, the semiconductor substrate and the firstepitaxial layer are of p-type; however, may naturally be of n-type.

INDUSTRIAL APPLICABILITY

The present invention is useful to a so-called OEIC in which atransistor characterized in its high speed and high performance and alight receiving element characterized in it high speed and high lightreceiving sensitivity are integrated on the same substrate.

1. An optical semiconductor device provided with a light receivingelement and a transistor on the same substrate, the opticalsemiconductor device comprising: an embedding layer of a firstconductivity type having a high dopant concentration formed at an uppersection of a semiconductor substrate of the first conductivity type; afirst epitaxial layer of the first conductivity type having a low dopantconcentration formed on the embedding layer; a second epitaxial layer ofa second conductivity type having a low dopant concentration formed onthe first epitaxial layer; a first diffusion layer of the firstconductivity type having a low dopant concentration selectively formedon the second epitaxial layer; and a second diffusion layer of thesecond conductivity type having a high dopant concentration formed at anupper section of the first diffusion layer, wherein: the first andsecond diffusion layers constitute the light receiving element, and thetransistor is formed in the second epitaxial layer, and the firstdiffusion layer has its dopant concentration peak in an interfacebetween the first and second epitaxial layers.
 2. The opticalsemiconductor device as claimed in claim 1, further comprising a welllayer of the second conductivity type selectively formed in the secondepitaxial layer, wherein the transistor is formed in the well layer. 3.The optical semiconductor device as claimed in claim 1, furthercomprising a well layer of the first conductivity type selectivelyformed in the second epitaxial layer, wherein the transistor is formedin the well layer.
 4. The optical semiconductor device as claimed inclaim 1, further comprising a third diffusion layer of the firstconductivity type having its dopant concentration peak on a surface ofthe second epitaxial layer at an upper section of the first diffusionlayer.
 5. A method for manufacturing an optical semiconductor deviceprovided with a light receiving element and a transistor on the samesubstrate, the method comprising: a step for forming a first embeddinglayer of a first conductive type having a first dopant concentration atan upper section of a semiconductor substrate of the first conductivitytype, the first dopant concentration being higher than a dopantconcentration of the semiconductor substrate; a step for forming a firstepitaxial layer of the first conductivity type having a second dopantconcentration lower than the first dopant concentration on the firstembedding layer; a step for forming a second epitaxial layer of a secondconductivity type having a third dopant concentration on the firstepitaxial layer; a step for selectively forming a first diffusion layerof the first conductivity type having a fourth dopant concentration inthe second epitaxial layer and the first epitaxial layer in an area ofthe light receiving element by means of ion implantation so that thefirst diffusion layer has its dopant concentration peak in the interfacebetween the first epitaxial layer and the second epitaxial layer; a stepfor forming a second diffusion layer of the second conductivity typehaving a fifth dopant concentration higher than the third dopantconcentration at an upper section of the first diffusion layer; and astep for selectively forming the transistor in the second epitaxiallayer, wherein the first and second diffusion layers constitute thelight receiving element.
 6. The method for manufacturing the opticalsemiconductor device as claimed in claim 5, further including, betweenthe steps of forming a second epitaxial layer and forming a seconddiffusion layer, a step for selectively forming a third diffusion layerof the first conductive type having its dopant concentration peak on asurface of the second epitaxial layer at an upper section of the firstdiffusion layer.
 7. The method for manufacturing the opticalsemiconductor device as claimed in claim 5, further including a step forforming a second embedding layer of the first conductive type having ahigh dopant concentration at an upper section of the semiconductorsubstrate.
 8. The method for manufacturing the optical semiconductordevice as claimed in claim 5, wherein the second epitaxial layer isformed in two different stages.